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* DC Current Gain -- hFE = 40 (Min) @ IC = 1.0 Adc * BD802 is complementary with BD 795, 797, 799, 801
* Pulse Test: Pulse Width
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits.
Plastic High Power Silicon PNP Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7 Current-Gain -- Bandwidth Product (IC = 0.25 Adc, VCE = 10 Vdc, f = MHz) Base-Emitter On Voltage* (IC = 3.0 Adc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage* (IC = 3.0 Adc, IB = 0.3 Adc) DC Current Gain (IC = 1.0 A, VCE = 2.0 V) (IC = 3.0 A, VCE = 2.0 V) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) Collector-Emitter Sustaining Voltage* (IC = 0.05 Adc, IB = 0) Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Device Dissipation TC = 25_C Derate above 25_C Base Current Collector Current Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Characteristic Rating
x 300 s, Duty Cycle x 2.0.
Characteristic
Symbol
TJ, Tstg
Symbol
VCBO
VCEO
VEBO
PD
JC
IC
IB
- 55 to + 150
Value
65 522
100
100
3.0
8.0
5.0
1.92
Max
VCE(sat)
VBE(on)
Symbol
BVCEO
ICBO
IEBO
hFE
fT
Watts mW/_C
Unit
_C/W
Adc
Adc
Vdc
Vdc
Vdc
Unit
_C
Min
100
3.0
30 15
--
--
--
--
8 AMPERE POWER TRANSISTORS PNP SILICON 100 VOLTS 65 WATTS
BD802
Max
CASE 221A-06 TO-220AB
1.6
1.0
1.0
0.1
--
-- --
--
Order this document by BD802/D
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
1
BD802
IC, COLLECTOR CURRENT (AMP) 10 5 TJ = 150C 1 0.5 5 ms 100 s
dc
The Safe Operating Area Curves indicate IC - VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power-temperature derating must be observed for both steady state and pulse power conditions.
0.1 1 BD802 5 10 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100
0.05
Figure 1. Active Region Safe Operating Area
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 1.6
IC = 10 mA
100 mA
1.0 A
3.0 A
1.2
0.8
TJ = 25C
0.4 0 0.05 0.07 0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 1.8
20
30
50
70
100
200
300
500
Figure 2. Collector Saturation Region
5.0 hFE , NORMALIZED DC CURRENT GAIN 3.0 2.0 V, VOLTAGE (VOLTS) 25C 1.0 0.7 0.5 0.3 0.2 0.1 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMPS) 1.0 D = 0.5 0.5 0.3 0.2 D = 0.1 D = 0.2 - 55C 150C VCE = 2.0 V 1.7 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 2.0 3.0 4.0 VBE(sat) @ IC/IB = 10 TJ = 25C
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.03 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMPS)
2.0 3.0 5.0
Figure 3. Normalized DC Current Gain
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
Figure 4. "On" Voltage
0.1 D = 0.05 D = 0.01 0.5 0.03 0.02 0.01 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 70 100 200 300 500 700 1000 D = 0 (SINGLE PULSE)
Figure 5. Thermal Response 2 Motorola Bipolar Power Transistor Device Data
BD802
PACKAGE DIMENSIONS
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
CASE 221A-06 TO-220AB ISSUE Y
Motorola Bipolar Power Transistor Device Data
3
BD802
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4
Motorola Bipolar Power Transistor Device Data
*BD802/D*
BD802/D

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